SI3447DV Fairchild Semiconductor

Description: P-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6.