SI3456DV Fairchild Semiconductor

Description: SMALL SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.