SI3457BDV-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 3.7A 6TSOP, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.14W (Ta), Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).