SI3459DV-T1-E3

Description: MOSFET P-CH 60V 2.2A 6TSOP, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).