SI3529DV-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 40V 2.5A 6-TSOP, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).