Технічний опис SI4190DY-T1-GE3 Vishay
Description: MOSFET N-CH 100V 20A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V.
Інші пропозиції SI4190DY-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI4190DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 20A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
товар відсутній |