SI4410DYPBF
Виробник:
на замовлення 37 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI4410DYPBF
Description: MOSFET N-CH 30V 10A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Інші пропозиції SI4410DYPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SI4410DYPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 10A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SI4410DYPBF | Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4410DYPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET N-CH 30V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SI4410DYPBF |
|
Виробник: Infineon / IR
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
товару немає в наявності
В кошику
од. на суму грн.