SI4435DDY-T1-E3 VISHAY
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
On-state resistance: 35mΩ
Mounting: SMD
Pulsed drain current: -50A
Power dissipation: 3.2W
Gate charge: 50nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.99 грн |
| 14+ | 32.07 грн |
| 100+ | 25.20 грн |
| 500+ | 22.48 грн |
| 1000+ | 20.53 грн |
| 2500+ | 19.34 грн |
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Технічний опис SI4435DDY-T1-E3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A, On-state resistance: 35mΩ, Mounting: SMD, Pulsed drain current: -50A, Power dissipation: 3.2W, Gate charge: 50nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: -6.5A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SO8.