SI4435DDY-T1-E3 VISHAY
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.27 грн |
| 14+ | 31.63 грн |
| 100+ | 24.85 грн |
| 500+ | 22.17 грн |
| 1000+ | 20.25 грн |
| 2500+ | 19.08 грн |
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Технічний опис SI4435DDY-T1-E3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A, Type of transistor: P-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -6.5A, Pulsed drain current: -50A, Power dissipation: 3.2W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 35mΩ, Mounting: SMD, Gate charge: 50nC, Kind of package: reel; tape, Kind of channel: enhancement.