SI4467DY Fairchild Semiconductor

Description: P-CHANNEL POWER MOSFET, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).