Технічний опис SI4501ADYT1E3 VISHAY
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 30V, 8V, Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A, Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4501ADYT1E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SI4501ADY-T1-E3 | Виробник : VISHAY |
на замовлення 2444 шт: термін постачання 14-28 дні (днів) |
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SI4501ADY-T1-E3 | Виробник : Vishay |
 Trans MOSFET N/P-CH 30V/8V 6.3A/4.1A 8-Pin SOIC N T/R |
товару немає в наявності |
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SI4501ADY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
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SI4501ADY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |