SI4542DY ON Semiconductor / Fairchild
на замовлення 8580 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SI4542DY ON Semiconductor / Fairchild
Description: MOSFET N/P-CH 30V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Інші пропозиції SI4542DY
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI4542DY | Виробник : ON Semiconductor |
 Trans MOSFET N/P-CH 30V 6A 8-Pin SOIC T/R |
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SI4542DY | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Drain current: 6/-6A Kind of channel: enhanced Drain-source voltage: 30/-30V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±30V Case: SO8 On-state resistance: 48/51mΩ Mounting: SMD кількість в упаковці: 1 шт |
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SI4542DY | Виробник : onsemi |
Description: MOSFET N/P-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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SI4542DY | Виробник : onsemi |
Description: MOSFET N/P-CH 30V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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SI4542DY | Виробник : Vishay / Siliconix |
MOSFET 30V 6.9/6.1A 2W |
товар відсутній |
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SI4542DY | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Drain current: 6/-6A Kind of channel: enhanced Drain-source voltage: 30/-30V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±30V Case: SO8 On-state resistance: 48/51mΩ Mounting: SMD |
товар відсутній |