SI4562DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис SI4562DY-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.6V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V, Drain to Source Voltage (Vdss): 20V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).