SI4654DY-T1-E3 VISHAY

Description: MOSFET N-CH 25V 28.6A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).