Технічний опис SI4920DY-T1-GE3 Vishay
Description: MOSFET 2N-CH 30V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC.
Інші пропозиції SI4920DY-T1-GE3
| Фото | Назва | Виробник | Інформація |
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SI4920DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC |
товару немає в наявності |