SI4941EDY-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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Технічний опис SI4941EDY-T1-E3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 10A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4941EDY-T1-E3
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SI4941EDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 10A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
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