SI4953ADYT1E3 VISHAY

Description: MOSFET 2P-CH 30V 3.7A 8SOIC, Current - Continuous Drain (Id) @ 25°C: 3.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V.