SI4965DYT1E3 VISHAY

Description: MOSFET 2P-CH 8V 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V, Drain to Source Voltage (Vdss): 8V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).