SI5618-13P Micro Commercial Co

Description: MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 830mW, Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).