SI5905BDC-T1-E3 Vishay Siliconix

Description: MOSFET 2P-CH 8V 4A 1206-8, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V, Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 8V, Power - Max: 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).