SI5915DC-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 8V 3.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Description: MOSFET 2P-CH 8V 3.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
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Технічний опис SI5915DC-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 8V 3.4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 1206-8 ChipFET™.