SI6463DQ Fairchild Semiconductor

Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8.8A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 10 V.