SI6463DQ Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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Технічний опис SI6463DQ Fairchild Semiconductor
Description: P-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 5045 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Bulk.