SI6473DQ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Description: MOSFET P-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
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Технічний опис SI6473DQ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V, Power Dissipation (Max): 1.08W (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 8-TSSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V.