SI6967DQ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8TSSOP
Drain to Source Voltage (Vdss): 8V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
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Технічний опис SI6967DQ-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 8V 8TSSOP, Drain to Source Voltage (Vdss): 8V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V.


