SI9926BDY-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 20V 6.2A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.14W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).