SI9926DY ONSEMI
Виробник: ONSEMI
Description: ONSEMI - SI9926DY - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис SI9926DY ONSEMI
Description: MOSFET 2N-CH 20V 6.5A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 900mW (Ta), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.
Інші пропозиції SI9926DY за ціною від 23.72 грн до 23.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| SI9926DY | Fairchild Semiconductor |
Description: MOSFET 2N-CH 20V 6.5A 8SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 900mW (Ta) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
на замовлення 1737 шт: термін постачання 21-31 дні (днів) |
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| SI9926DY | KEXIN |
09+ |
на замовлення 200018 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| SI9926DY |
|
Виробник: Fairchild Semiconductor
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 900mW (Ta)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 900mW (Ta)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
на замовлення 1737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 865+ | 23.72 грн |