Технічний опис SI9933BDYT1E3 VISHAY
Description: MOSFET 2P-CH 20V 3.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI9933BDYT1E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SI9933BDY-T1-E3 | Виробник : Vishay |
 Trans MOSFET P-CH 20V 3.6A 8-Pin SOIC N T/R |
товару немає в наявності |
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SI9933BDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
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SI9933BDY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |