SIA777EDJ-T1-GE3 Vishay Siliconix


sia777ed.pdf
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V/12V SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A
Drain to Source Voltage (Vdss): 20V, 12V
Power - Max: 5W, 7.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
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Технічний опис SIA777EDJ-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 20V/12V SC70-6L, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A, Drain to Source Voltage (Vdss): 20V, 12V, Power - Max: 5W, 7.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR).