SIA906EDJ-T5-GE3

SIA906EDJ-T5-GE3 Vishay Siliconix



Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.9W (Ta), 7.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
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Технічний опис SIA906EDJ-T5-GE3 Vishay Siliconix

Description: DUAL N-CHANNEL 20-V (D-S) MOSFET, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.9W (Ta), 7.8W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount.