SIC0860PL8-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 8A DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 346pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
| Кількість | Ціна |
|---|---|
| 3000+ | 160.29 грн |
Відгуки про товар
Написати відгук
Технічний опис SIC0860PL8-TP MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 8A DFN8080A, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 346pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DFN8080A, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 36 µA @ 650 V.
Інші пропозиції SIC0860PL8-TP за ціною від 144.85 грн до 421.69 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIC0860PL8-TP | MCC (Micro Commercial Components) |
Description: DIODE SIL CARB 650V 8A DFN8080APackaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 346pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DFN8080A Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
| SIC0860PL8-TP |
![]() |
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 8A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 346pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Description: DIODE SIL CARB 650V 8A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 346pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 421.69 грн |
| 10+ | 270.84 грн |
| 100+ | 194.32 грн |
| 500+ | 151.74 грн |
| 1000+ | 144.85 грн |

