SIC20120PTA-BP Micro Commercial Components (MCC)
Виробник: Micro Commercial Components (MCC)
Schottky Diodes & Rectifiers 1200V,20A,SIC 180A 70A 240W
| Кількість | Ціна |
|---|---|
| 1+ | 2086.44 грн |
| 10+ | 1896.51 грн |
| 25+ | 1574.59 грн |
| 50+ | 1481.76 грн |
| 100+ | 1407.92 грн |
| 250+ | 1343.22 грн |
| 500+ | 1278.52 грн |
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Технічний опис SIC20120PTA-BP Micro Commercial Components (MCC)
Description: DIODE SIL CARB 1200V 10A TO2473, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V.
Інші пропозиції SIC20120PTA-BP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SIC20120PTA-BP | MCC (Micro Commercial Components) |
Description: DIODE SIL CARB 1200V 10A TO2473 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SIC20120PTA-BP |
|
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.