SICB1060P-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 1+ | 398.75 грн |
| 10+ | 256.59 грн |
| 100+ | 184.59 грн |
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Технічний опис SICB1060P-TP MCC (Micro Commercial Components)
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Current - Reverse Leakage @ Vr: 44 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 36pF @ 400V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції SICB1060P-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
SICB1060P-TP | MCC (Micro Commercial Components) |
Description: DIODE SIL CARBIDE 650V 10A D2PAKCurrent - Reverse Leakage @ Vr: 44 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 36pF @ 400V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SICB1060P-TP | Micro Commercial Components (MCC) |
SiC Schottky Diodes 650V,10A,SIC SBD,TO-263 Package |
товару немає в наявності |
В кошику од. на суму грн. |
| SICB1060P-TP |
![]() |
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SICB1060P-TP |
![]() |
Виробник: Micro Commercial Components (MCC)
SiC Schottky Diodes 650V,10A,SIC SBD,TO-263 Package
SiC Schottky Diodes 650V,10A,SIC SBD,TO-263 Package
товару немає в наявності
В кошику
од. на суму грн.


