SICRB20650A SMC Diode Solutions
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 1+ | 417.92 грн |
| 10+ | 337.84 грн |
| 100+ | 273.33 грн |
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Технічний опис SICRB20650A SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 20A D2PAK, Current - Reverse Leakage @ Vr: 100 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: D2PAK, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1190pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції SICRB20650A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SICRB20650A | SMC Diode Solutions |
Description: DIODE SIL CARBIDE 650V 20A D2PAK Current - Reverse Leakage @ Vr: 100 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1190pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| SICRB20650A |
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.