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SICU0460B-TP

SICU0460B-TP Micro Commercial Components (MCC)

SICU0460B_DPAK_.pdf
Виробник: Micro Commercial Components (MCC)
SiC Schottky Diodes 650V,4A,SIC 34A 20A 60W
на замовлення 2319 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+267.47 грн
10+169.03 грн
100+104.79 грн
500+85.80 грн
1000+81.58 грн
2500+80.87 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис SICU0460B-TP Micro Commercial Components (MCC)

Description: DIODE SIL CARBIDE 650V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 15 µA @ 650 V.

Інші пропозиції SICU0460B-TP

Фото Назва Виробник Інформація Доступність
Ціна
SICU0460B-TP SICU0460B-TP MCC (Micro Commercial Components) SICU0460B(DPAK).pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
SICU0460B-TP SICU0460B-TP MCC (Micro Commercial Components) SICU0460B(DPAK).pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
SICU0460B-TP SICU0460B(DPAK).pdf
SICU0460B-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
SICU0460B-TP SICU0460B(DPAK).pdf
SICU0460B-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.