SICW025N065H4-BP Micro Commercial Co

Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 107A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V.