SICW025N120Y-BP MCC (Micro Commercial Components)

Description: SIC N-CHANNEL MOSFET,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 18V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 4V @ 15mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 800 V.