SICW025N120Y-BP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: SIC N-CHANNEL MOSFET,TO-247AB
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 18V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 800 V
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1168.56 грн |
| 10+ | 796.13 грн |
| 360+ | 561.11 грн |
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Технічний опис SICW025N120Y-BP MCC (Micro Commercial Components)
Description: MICRO COMMERCIAL COMPONENTS (MCC) - SICW025N120Y-BP - Siliziumkarbid-MOSFET, Eins, n-Kanal, 80 A, 1.2 kV, 0.04 ohm, TO-247AB, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 80A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 365W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: TO-247AB, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.04ohm.
Інші пропозиції SICW025N120Y-BP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SICW025N120Y-BP | MICRO COMMERCIAL COMPONENTS (MCC) |
Description: MICRO COMMERCIAL COMPONENTS (MCC) - SICW025N120Y-BP - Siliziumkarbid-MOSFET, Eins, n-Kanal, 80 A, 1.2 kV, 0.04 ohm, TO-247AB tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 365W SVHC: Lead (04-Feb-2026) Bauform - Transistor: TO-247AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.04ohm |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| SICW025N120Y-BP |
|
Виробник: MICRO COMMERCIAL COMPONENTS (MCC)
Description: MICRO COMMERCIAL COMPONENTS (MCC) - SICW025N120Y-BP - Siliziumkarbid-MOSFET, Eins, n-Kanal, 80 A, 1.2 kV, 0.04 ohm, TO-247AB
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 365W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-247AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.04ohm
Description: MICRO COMMERCIAL COMPONENTS (MCC) - SICW025N120Y-BP - Siliziumkarbid-MOSFET, Eins, n-Kanal, 80 A, 1.2 kV, 0.04 ohm, TO-247AB
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 365W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-247AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.04ohm
на замовлення 360 шт:
термін постачання 21-31 дні (днів)