Технічний опис SICW028N120A4-BP Micro Commercial Components (MCC)
Description: MOSFET N-CH 1200 V 80A TO247-4, Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -5V, Drive Voltage (Max Rds On, Min Rds On): 16V, 20V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 3V @ 15mA, Power Dissipation (Max): 375W (Tc).
Інші пропозиції SICW028N120A4-BP за ціною від 956.04 грн до 1765.88 грн
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SICW028N120A4-BP | Micro Commercial Co |
 Description: MOSFET N-CH 1200 V 80A TO247-4Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -5V Drive Voltage (Max Rds On, Min Rds On): 16V, 20V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 3V @ 15mA Power Dissipation (Max): 375W (Tc) |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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| SICW028N120A4-BP |
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Виробник: Micro Commercial Co
Description: MOSFET N-CH 1200 V 80A TO247-4
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -5V
Drive Voltage (Max Rds On, Min Rds On): 16V, 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 3V @ 15mA
Power Dissipation (Max): 375W (Tc)
Description: MOSFET N-CH 1200 V 80A TO247-4
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -5V
Drive Voltage (Max Rds On, Min Rds On): 16V, 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 3V @ 15mA
Power Dissipation (Max): 375W (Tc)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1765.88 грн |
| 10+ | 1218.82 грн |
| 25+ | 1093.51 грн |
| 100+ | 956.04 грн |