SICW060N065H-BP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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Технічний опис SICW060N065H-BP MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247AB, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 20mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V.
Інші пропозиції SICW060N065H-BP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SICW060N065H-BP | Виробник : Micro Commercial Components (MCC) |
SiC MOSFETs SIC MOSFETS,TO-247AB |
товару немає в наявності |