SICW080N120Y4-BP MCC (Micro Commercial Components)

Description: N-CHANNEL MOSFET,TO-247-4, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -8V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 3.6V @ 5mA, Power Dissipation (Max): 223W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V, Current - Continuous Drain (Id) @ 25°C: 39A, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.