SICW100N065H-BP Micro Commercial Co
Виробник: Micro Commercial Co
Description: SIC MOSFET,TO-247AB
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247AB
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис SICW100N065H-BP Micro Commercial Co
Description: SIC MOSFET,TO-247AB, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247AB, Vgs(th) (Max) @ Id: 4.5V @ 10mA, Power Dissipation (Max): 166W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SICW100N065H-BP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SICW100N065H-BP | Micro Commercial Components (MCC) |
 SiC MOSFETs SiC MOSFET,TO-247AB |
товару немає в наявності |
В кошику од. на суму грн. |
| SICW100N065H-BP |
|
Виробник: Micro Commercial Components (MCC)
SiC MOSFETs SiC MOSFET,TO-247AB
SiC MOSFETs SiC MOSFET,TO-247AB
товару немає в наявності
В кошику
од. на суму грн.