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Технічний опис SIHF634STRR-GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W, On-state resistance: 0.45Ω, Mounting: SMD, Pulsed drain current: 32A, Power dissipation: 74W, Gate charge: 41nC, Polarisation: unipolar, Drain current: 5.1A, Kind of channel: enhancement, Drain-source voltage: 250V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: D2PAK; TO263.
Інші пропозиції SIHF634STRR-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHF634STRR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W On-state resistance: 0.45Ω Mounting: SMD Pulsed drain current: 32A Power dissipation: 74W Gate charge: 41nC Polarisation: unipolar Drain current: 5.1A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; TO263 |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHF634STRR-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W
On-state resistance: 0.45Ω
Mounting: SMD
Pulsed drain current: 32A
Power dissipation: 74W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 5.1A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W
On-state resistance: 0.45Ω
Mounting: SMD
Pulsed drain current: 32A
Power dissipation: 74W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 5.1A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
товару немає в наявності
В кошику
од. на суму грн.