Технічний опис SIHF830STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W, Case: D2PAK; TO263, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 2.9A, Pulsed drain current: 18A, Gate charge: 38nC, On-state resistance: 1.5Ω, Type of transistor: N-MOSFET, Power dissipation: 74W, Gate-source voltage: ±20V, Kind of channel: enhancement.
Інші пропозиції SIHF830STRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHF830STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Gate charge: 38nC On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 74W Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |