SIHFR110-GE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
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Технічний опис SIHFR110-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W, Case: DPAK; TO252, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Mounting: SMD, Polarisation: unipolar, Gate charge: 8.3nC, On-state resistance: 0.54Ω, Drain current: 2.7A, Pulsed drain current: 17A, Gate-source voltage: ±20V, Power dissipation: 25W, Drain-source voltage: 100V.