Технічний опис SIHFR120TR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W, Case: DPAK; TO252, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 42W, Polarisation: unipolar, Type of transistor: N-MOSFET, On-state resistance: 0.27Ω, Drain current: 4.9A, Gate charge: 16nC, Drain-source voltage: 100V, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 31A, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR120TR-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFR120TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A кількість в упаковці: 1 шт |
товар відсутній |
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| SIHFR120TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A |
товар відсутній |