Технічний опис SIHFR120TR-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W, Kind of package: reel; tape, Case: DPAK; TO252, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Gate charge: 16nC, On-state resistance: 0.27Ω, Drain current: 4.9A, Gate-source voltage: ±20V, Pulsed drain current: 31A, Power dissipation: 42W, Drain-source voltage: 100V, Polarisation: unipolar.
Інші пропозиції SIHFR120TR-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHFR120TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Kind of package: reel; tape Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 16nC On-state resistance: 0.27Ω Drain current: 4.9A Gate-source voltage: ±20V Pulsed drain current: 31A Power dissipation: 42W Drain-source voltage: 100V Polarisation: unipolar |
товару немає в наявності |