Технічний опис SIHFR210TRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 1.7A, Pulsed drain current: 10A, Power dissipation: 25W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 1.5Ω, Mounting: SMD, Gate charge: 8.2nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR210TRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIHFR210TRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.7A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHFR210TRL-GE3 | Виробник : Vishay / Siliconix | MOSFET |
товар відсутній |
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| SIHFR210TRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.7A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |