Технічний опис SIHFR9024-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -5.6A, Pulsed drain current: -35A, Power dissipation: 42W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR9024-GE3
| Фото | Назва | Виробник | Інформація |
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| SIHFR9024-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHFR9024-GE3 | Виробник : Vishay / Siliconix | MOSFET |
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| SIHFR9024-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |