Технічний опис SIHFR9110TRL-GE3 Vishay Semiconductors
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W, Power dissipation: 25W, Mounting: SMD, Kind of package: reel; tape, Case: DPAK; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Pulsed drain current: -12A, Drain current: -2A, Gate charge: 8.7nC, On-state resistance: 1.2Ω, Gate-source voltage: ±20V, Kind of channel: enhancement.
Інші пропозиції SIHFR9110TRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHFR9110TRL-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Power dissipation: 25W Mounting: SMD Kind of package: reel; tape Case: DPAK; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -12A Drain current: -2A Gate charge: 8.7nC On-state resistance: 1.2Ω Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |