Технічний опис SIL08N02-TP Micro Commercial Components
Description: N-CHANNEL MOSFET,SOT23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.5W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V.
Інші пропозиції SIL08N02-TP за ціною від 8.92 грн до 37.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SIL08N02-TP | MCC (Micro Commercial Components) |
 Description: N-CHANNEL MOSFET,SOT23-6LPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
на замовлення 2446 шт: термін постачання 21-31 дні (днів) |
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| SIL08N02-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: N-CHANNEL MOSFET,SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
на замовлення 2446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.54 грн |
| 14+ | 22.22 грн |
| 100+ | 14.11 грн |
| 500+ | 9.97 грн |
| 1000+ | 8.92 грн |