| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 27.00 грн |
| 29+ | 26.18 грн |
| 50+ | 24.84 грн |
| 100+ | 22.65 грн |
| 250+ | 21.39 грн |
| 500+ | 21.02 грн |
| 1000+ | 20.68 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
28 шт
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Технічний опис SIR472DP-T1-GE3 Vishay
Description: MOSFET N-CH 30V 20A PPAK SO-8, Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc).
Інші пропозиції SIR472DP-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIR472DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 20A PPAK SO-8Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SIR472DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 20A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIR472DP-T1-GE3 | Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SIRA18DP-T1-GE3 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIR472DP-T1-GE3 | VISHAY |
Description: VISHAY - SIR472DP-T1-GE3 - N CHANNEL MOSFET, 30V, 20A, SOIC Transistormontage: Surface Mount Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 20 Rds(on)-Messspannung Vgs: 20 MSL: MSL 1 - Unlimited Verlustleistung Pd: 3.9 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 0.015 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.5 SVHC: To Be Advised |
товару немає в наявності |
В кошику од. на суму грн. |
| SIR472DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Description: MOSFET N-CH 30V 20A PPAK SO-8
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| SIR472DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SIR472DP-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFET RECOMMENDED ALT 78-SIRA18DP-T1-GE3
MOSFET RECOMMENDED ALT 78-SIRA18DP-T1-GE3
товару немає в наявності
В кошику
од. на суму грн.
| SIR472DP-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIR472DP-T1-GE3 - N CHANNEL MOSFET, 30V, 20A, SOIC
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 20
Rds(on)-Messspannung Vgs: 20
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 3.9
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.015
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.5
SVHC: To Be Advised
Description: VISHAY - SIR472DP-T1-GE3 - N CHANNEL MOSFET, 30V, 20A, SOIC
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 20
Rds(on)-Messspannung Vgs: 20
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 3.9
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.015
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.5
SVHC: To Be Advised
товару немає в наявності
В кошику
од. на суму грн.