Технічний опис SIR680LDP-T1-UE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 130A, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 2.8mΩ, Mounting: SMD, Gate charge: 90nC, Kind of package: reel; tape, Kind of channel: enhancement, Technology: TrenchFET®.
Інші пропозиції SIR680LDP-T1-UE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SIR680LDP-T1-UE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. |
| SIR680LDP-T1-UE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.