SIZ916DT-T1-GE3 Vishay Siliconix


siz916dt.pdf
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 22.7W, 100W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Технічний опис SIZ916DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 16A 8POWERPAIR, Supplier Device Package: 8-PowerPair® (6x5), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 16A, 40A, Drain to Source Voltage (Vdss): 30V, Power - Max: 22.7W, 100W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).